 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. * Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz * Built-In Matching Network for Broadband Operation Using Double Match Technique * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications 2N6439 60 W, 225 to 400 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 MAXIMUM RATINGS* Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 33 60 4.0 146 0.83 - 65 to + 200 Unit Vdc Vdc Vdc Watts W/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.2 Unit C/W ELECTRICAL CHARACTERISTICS* (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 33 60 4.0 -- -- -- -- -- -- -- -- 2.0 Vdc Vdc Vdc mAdc NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. * Indicates JEDEC Registered Data. (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 2N6439 1 ELECTRICAL CHARACTERISTICS* -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 10 -- 100 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 67 75 pF BROADBAND FUNCTIONAL TESTS (Figure 6) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 225 - 400 MHz) Electrical Ruggedness (Pout = 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1 all phase angles) GPE No Degradation in Output Power 7.8 8.5 -- dB -- NARROW BAND FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) * Indicates JEDEC Registered Data. GPE 7.8 55 10 -- -- -- dB % C8 L2 C5 C1 L1 C7 L3 C6 L5 C3 DUT C4 C11 C2 R1 C1 to C4, C11 -- 4.0 - 40 pF C5 to C8 -- 33 pF C9 -- 1000 pF C10 -- 5.0 F R1 -- 15 L1, L2 -- 3/16 x 1 Copper Strap L3 -- 1.5 H L4 -- 10 H L5 -- 1 Turn #16 AWG, 5/16 I.D. L4 C9 C10 VCC = 28 V Figure 1. 400 MHz Test Amplifier (Narrow Band) 2N6439 2 MOTOROLA RF DEVICE DATA NARROW BAND DATA 100 Pout , OUTPUT POWER (WATTS) VCC = 28 V Pout , OUTPUT POWER (WATTS) Pin = 8 W 6W 120 VCC = 28 V 100 f = 225 MHz 400 MHz 80 80 60 40 4W 60 20 0 200 2W 40 250 300 350 f, FREQUENCY (MHz) 400 450 20 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 18 20 Figure 2. Pout versus Frequency Figure 3. Output Power versus Input Power 12 G PE , COMMON-EMITTER AMPLIFIER POWER GAIN (dB) Pout = 60 W VCC = 28 V 11 100 Pout , OUTPUT POWER (WATTS) f = 400 MHz 80 Pin = 6 W 60 4W 40 10 9 20 8 200 250 300 350 f, FREQUENCY (MHz) 400 450 0 10 14 18 22 VCC, SUPPLY VOLTAGE (VOLTS) 26 30 Figure 4. Power Gain versus Frequency Figure 5. Output Power versus Supply Voltage 100 Pout , OUTPUT POWER (WATTS) f = 225 MHz 80 Pin = 8 W 60 4W 40 20 0 10 14 18 22 VCC, SUPPLY VOLTAGE (VOLTS) 26 30 Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA 2N6439 3 R1 B C13 + - L1 L2 A C12 L5 0.5 L4 0.8 C8 4:1 C2 C3 C4 C5 C6 C7 C9 C10 C11 4:1 T2 50 LINE RFC1 C14 C16 C15 VCC DUT 50 LINE T1 C1 A L3 R2 C17 C1 -- 68 pF C2, C4, C8, C10 -- 27 pF C3, C5, C11 -- 10 pF C6, C7 -- 51 pF C9 -- 1.0 - 10 pF JOHANSON C12 -- 100 pF C13, C15 -- 680 pF C14, C16 -- 1.0 F, 35 V Tantalum C17 -- 0.1 F, ERIE Red Cap RFC1 -- Ferrite Bead Choke, Feroxcube VK200 19/4B B -- Ferroxcube 56-590-65/4B Ferrite Bead T1, T2 -- 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn R1 -- 11 , 1.0 W R2 -- 20 , 1/4 W L1 -- 10 Turns, #22 AWG, 1/8 I.D. L2 -- 4 Turns, #16 AWG, 1/4 I.D. L3 -- 6 Turns, #24 AWG, 1/8 I.D. L4, L5 -- 1 x 0.25 Microstrip Line Board Material 0.031 Thick Teflon-Fiberglass Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic BROADBAND DATA (Circuit, Figure 7) 10 100 Pout = 60 W VCC = 28 V G PE , POWER GAIN (dB) 8 6 EFFICIENCY (%) 250 300 350 f, FREQUENCY (MHz) 400 80 Pout = 60 W VCC = 28 V 60 40 4 2 20 0 0 200 200 250 300 350 f, FREQUENCY (MHz) 400 Figure 8. Power Gain versus Frequency Figure 9. Efficiency versus Frequency 2N6439 4 MOTOROLA RF DEVICE DATA 6 Pout = 60 W VCC = 28 V 0.1 5 INPUT VSWR 450 400 0.2 .3 f = 225 MHz 0.1 Zin 275 Pout = 60 W, VCC = 28 V 350 4 ZOL* 450 3 2 1 200 250 300 350 f, FREQUENCY (MHz) 400 275 350 400 FREQUENCY MHz ZOL* = Conjugate of the optimum load 225 ZOL* = impedance into which the device 275 ZOL* = output operates at a given output 350 ZOL* = power, voltage and frequency. 400 450 f = 225 MHz Zin OHMS 0.7 + j1.6 0.9 + j2.2 2.2 + j2.1 1.2 + j0.6 0.5 + j1.6 ZOL* OHMS 2.2 - j1.8 2.1 - j0.9 2.1 - j0.1 2.0 + j0.2 1.9 + j0.9 Figure 10. Input VSWR versus Frequency Figure 11. Series Equivalent Input-Output Impedance MOTOROLA RF DEVICE DATA 2N6439 5 PACKAGE DIMENSIONS D R 3 F 4 K NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 1 Q 2 L B J E N H A U STYLE 1: PIN 1. 2. 3. 4. C DIM A B C D E F H J K L N Q R U EMITTER COLLECTOR EMITTER BASE CASE 316-01 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 2N6439 6 *2N6439/D* 2N6439/D MOTOROLA RF DEVICE DATA |
Price & Availability of 2N6439
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |